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 BFG 196
NPN Silicon RF Transistor * For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA * Power amplifier for DECT and PCN systems * fT = 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 196 BFG196 Q62702-F1292 1=E 2=B 3=E 4=C
Package SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 100 12 mW 800 150 - 65 ... + 150 - 65 ... + 150 75 C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS 90 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
BFG 196
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V A 100 nA 100 A 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 50 mA, VCE = 8 V
Semiconductor Group
2
Dec-13-1996
BFG 196
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
5 7.5 0.97 0.4 4 -
GHz pF 1.4 dB 1.5 2.5 -
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 50 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 11.5 6 14 8.5 -
IC = 50 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
BFG 196
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
900 mW
Ptot
700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS
TS
TA
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
10 2
RthJS
K/W
P totmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
4
Dec-13-1996
BFG 196
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
1.8 pF
9 GHz 10V
Ccb
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 4 8 12 16 V VR 22
fT
5V 3V 2V
7 6 5 4 3
1V
0.7V 2 1 0 0 20 40 60 80 mA IC 120
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
15 dB 10V 5V 3V
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
10
dB
G
13 12 11 10 9 8
G
2V 8
5V 3V 2V
7
6 1V 5 1V 4
7 6 5 0 20 40 60 80
0.7V 3 0.7V 2 mA IC 120 0 20 40 60 80 mA IC 120
Semiconductor Group
5
Dec-13-1996
BFG 196
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
f = Parameter
16
VCE = Parameter, f = 900MHz
42
IC=50mA
dB 0.9GHz
dBm 38
8V
G
12 0.9GHz
IP 3
36 5V 34 32
10 1.8GHz 8
30 28 26
3V
6
1.8GHz
24 22
2V
4 20 2 0 0 2 4 6 8 V 12 18 16 14 0 1V
20
40
60
80
V CE
mA IC
120
Power Gain Gma, Gms = f(f)
VCE = Parameter
32 dB 28
Power Gain |S21|2= f(f)
VCE = Parameter
30
IC=50mA
dB
IC=50mA
G
26 24 22 20 18 16
S21
20
15
10 14 12 10 8 6 4 2 0.0 10V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0 5 10V 1V 0.7V
-5 0.0
0.5
1.0
1.5
2.0
2.5
GHz f
3.5
Semiconductor Group
6
Dec-13-1996


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